SJMN600R65F Datasheet - KODENSHI KOREA

SJMN600R65F N-Channel Super Junction MOSFET

SJMN600R65F Features

* Drain-Source voltage: VDS=700V (@TJ=150C)

* Low drain-source On resistance: RDS(on)=0.6Ω (Max.)

* Ultra low gate charge: Qg=13.5nC(Typ.)

* RoHS compliant device

* 100% avalanche tested Ordering Information Part Number Marking Package SJMN600R65F N600R65 TO-220F-3L GDS

Datasheet Details

SJMN600R65F

KODENSHI KOREA

567.77 KB

N-channel super junction mosfet.

SJMN600R65F Distributor

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