KPDE0301M51 InGaAs Photodiode

Description

InGaAs Photodiode .

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Datasheet Specifications

Part number: KPDE0301M51
Manufacturer: KYOSEMI
File Size: 91.02 KB
Datasheet: KPDE0301M51-KYOSEMI.pdf
Description: InGaAs Photodiode

Features

* NIR sensitive up to 1700nm
* Plastic mold package

Applications

* Optical switches
* Sensors and industrial controls KPDE0301M51 1. Cathode 2. Anode Unit: mm Absolute Maximum Ratings Parameter Reverse voltage Reverse current Forward current Operating temperature Storage temperature Symbol VR IR IF Topr Tstg Value 20 500 50 -20 to +80 -30 to

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KPDE0301M51 InGaAs Photodiode KYOSEMI

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