* 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperatur
2SC3138
Kexin
54.84 KB
Silicon npn transistor.
SMD Type
Silicon NPN Triple Diffused Type 2SC3138
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors
Unit: mm
+0.1 2.4-0.1
High voltage. VCBO = 200 V (m.
📁 Related Datasheet
2SC313 - Silicon NPN Transistor
(New Jersey Semi-Conductor)
Free Datasheet http://../
Free Datasheet http://../
.
2SC3130 - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistors
2SC3130
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
■ Features
• High transition frequency fT .
2SC3130 - Silicon NPN RF Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3130
DESCRIPTION ·High Current-Gain Bandwidth Product ·Small Ou.
2SC3130 - Silicon NPN transistor
(BLUE ROCKET ELECTRONICS)
2SC3130
Rev.E Mar.-2016
DATA SHEET
/ Descriptions
SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package.
/ Features
fT ，。 High fT,.
2SC3130 - NPN Transistors
(Kexin)
SMD Type
Transistors
NPN Transistors 2SC3130
■ Features
● Collector Current Capability IC=50mA ● Collector Emitter Voltage VCEO=10V
+0.12.4 -0.1
S.
2SC3133 - NPN Transistor
(Mitsubishi Electric Semiconductor)
.
2SC3133 - NPN SILICON RF POWER TRANSISTOR
(ASI)
2SC3133
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE TO-220AB (COMMON EMITTER) DESCRIPTION:
The ASI 2SC3133 is Designed for RF Power amplifiers in .
2SC3134 - PNP/NPN Epitaxial Planar Silicon Transistors
(Sanyo Semicon Device)
Ordering number:EN1048B
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1252/2SC3134
F for AF Applications
Features
· High VEBO. · Wide ASO and high.
