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AP2012P3C-P22 Phototransistor

AP2012P3C-P22 Description

AP2012P3C-P22 2.0 x 1.25 mm Phototransistor .
z Made with NPN silicon phototransistor chips FEATURES z 2.

AP2012P3C-P22 Applications

* z Infrared applied systems z Optoelectronic switches z Photodetector control circuits z Sensor technology PACKAGE DIMENSIONS RECOMMENDED SOLDERING PATTERN (units : mm; tolerance : ± 0.1) Confidential ABSOLUTE MAXIMUM RATINGS at TA=25°C Notes: 1. All dimensions are in millimeters (inches). 2. To

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Datasheet Details

Part number
AP2012P3C-P22
Manufacturer
Kingbright
File Size
457.26 KB
Datasheet
AP2012P3C-P22-Kingbright.pdf
Description
Phototransistor

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Phototransistor Kingbright
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