BC546 Datasheet | Kingtronics

FEATURE for switching and AF amplifier application These transistors are subdivided into three groups A, B and C according to their current gain. BC546- - - BC550 NPN Silicon Epitaxial Planar Transistor Absolute Maximum Ratings(Ta=25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) BC46 BC547 BC550 BC548 BC549 BC546 BC547 BC550 BC548 BC549 Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range SYMBOLS VCBO VCEO VEBO IC ICM Ptot Tj Tstg Value 80 50 30 65 45 30 6 100 200 500 150 -65 to +150 UNITS V m A m A m W ℃ ℃ Website: .kingtronics. Email: info@kingtronics. Tel: (852) 8106 7033 Fax: (852) 8106 7099 1 BC546- - - BC550 Characteristics at Ta=25℃ Parameter DC Current Gain At VCE=5V, IC=2m A Current Gain Group A B C Collector Base Cutoff Current At VCB=30V Emitter Base Cutoff Current At VEB=5V Collector Base Breakdown Voltage at IC = 100 μA Collector Emitter Breakdown Voltage at IC = 1 m A Emitter Base Breakdown Voltage at IE = 10 μA Collector Emitter Saturation Voltage at IC = 10 m A, IB = 0.5 m A at IC = 100 m A, IB = 5 m A Base Emitter On Voltage at VCE = 5 V, IC = 2 m A at VCE = 5 V, IC = 10 m A Transition Frequency at VCE = 5 V, IC = 10 m A, f = 100 MHz Collector Base Capacitance at VCB = 10 V, f = 1 MHz BC546 BC547, BC550 BC548, BC549 BC546 BC547, BC550 BC548,...