1N5532
Knox Semiconductor Inc
39.08 KB
Low voltage avalanche zener diodes high performance: low noise/ low leakage.
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE 1N5518 - 1N5546
NOMINAL TEST MAX ZENER MAX REVERSE LEAKAGE MAX NOISE MAX R.
📁 Related Datasheet
1N5530 - LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE/ LOW LEAKAGE
(Knox Semiconductor Inc)
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE 1N5518 - 1N5546
NOMINAL TEST MAX ZENER MAX REVERSE LEAKAGE MAX NOISE MAX R.
1N5530 - 0.4W Low Voltage Avalanche Diodes
(JGD)
Features
* Low Zener noise specified * Low Zener impedance * Low leakage current * Hermetically sealed glass package
1N5518 THRU 1N5546
0.4W Low Volt.
1N5530 - Low Noise Zener Diode
(MA-COM)
1N5518 thru 1N5546
Low Noise Zener Diode Series
Features
Designed For Use @ Low Current Low Leakage Current Low Impedance Low Noise Axial L.
1N5530A - (1N5518A - 1N5546A) ZENER DIODES
(New Jersey Semi-Conductor)
.DataSheet.co.kr
Datasheet pdf - http://..net/
.
1N5530A - LOW VOLTAGE AVALANCHE ZENER DIODES
(Motorola)
IN5518A,B
thru
IN5546A,B
® MOTOROI.A
LOW VOLTAGE AVALANCHE SILICON OXIDE PASSIVATED ZENER REGULATOR DIODES
Highly reliable silicon regulators utiliz.
1N5530B - LOW REVERSE LEAKAGE CHARACTERISTICS
(Compensated Deuices Incorporated)
• 1N5518-1 THRU 1N5546B-1 AVAILABLE IN JAN, JANTX AND JANTXV PER MIL-PRF-19500/437 • LOW REVERSE LEAKAGE CHARACTERISTICS • LOW NOISE CHARACTERISTICS •.
1N5530B - 500mW Zener Diodes
(Microsemi)
1N5518B thru 1N5546B-1
Available on mercial
versions
Low Voltage Avalanche 500 mW Zener Diodes DO-35
Qualified per MIL-PRF-19500/437
DESCRIPTION.
1N5530B - SILICON ZENER DIODES
(Central Semiconductor)
1N5518B THRU 1N5546B
SILICON ZENER DIODES 400mW, 3.3 THRU 33 VOLT
±5% TOLERANCE
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICON.
