HJR4102E Datasheet - Koloona Industries

HJR4102E Sub-miniature PCB Relay

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Figure 1. Top View (1) Pulse duration ≤300μs, duty cycle ≤2% RDS(on) vs VGS VGS - Gate-to-Source Voltage (V) TC = 25°C Id = 100A TC = 125ºC Id = 100A GATE CHARGE 10 ID = 100A VDS = 30V 8 12 RDS(on) - O.

HJR4102E Features

* Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package PRODUCT SUMMARY TA = 25°C VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (10V) Gate Charge Gate to Drain Drain to Source On Resist

HJR4102E Datasheet (1.06 MB)