MR45V200B - FeRAM
The MR45V200B is a nonvolatile 262,144-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology.
The MR45V200B is accessed using Serial Peripheral Interface.
Unlike SRAMs, this device, whose cells are nonvolatile, eliminates batt
MR45V200B Features
* 262,144-word 8-bit configuration (Serial Periphera
