GM72V66441CT-10 Datasheet, sdram equivalent, LG Semicon

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GM72V66441CT-7 - 4M x 4-Bit x 4 Bank SDRAM (LG Semicon)
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GM72V66441CT-8 - 4M x 4-Bit x 4 Bank SDRAM (LG Semicon)
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GM72V661641D - 1M word x 16-Bit x 4 Bank SDRAM (LG Semicon)
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GM72V661641DI - 1M word x 16-Bit x 4 Bank SDRAM (LG Semicon)
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GM72V661641DLI - 1M word x 16-Bit x 4 Bank SDRAM (LG Semicon)
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GM72V66841CLT - 2M x 8-Bit x 4 Bank SDRAM (LG Semicon)
LG Semicon Co.,Ltd. Description The GM72V66841CT/CLT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic incl.

GM72V66841CT - 2M x 8-Bit x 4 Bank SDRAM (LG Semicon)
LG Semicon Co.,Ltd. Description The GM72V66841CT/CLT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic incl.

GM72V66841ELT - 2M x 8-Bit x 4 Bank SDRAM (Hynix Semiconductor)
Description The GM72V66841ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and outp.

GM72V66841ET - 2M x 8-Bit x 4 Bank SDRAM (Hynix Semiconductor)
Description The GM72V66841ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and outp.

GM72V66841Exx - 2M x 8-Bit x 4 Bank SDRAM (LG Semicon)
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