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1N5712 - Small Signal Schottky Diodes

Features

  • Metal-to-silicon junction High breakdown voltage Low turn-on voltage Ultrafast switching speed Prmarly intended for high level UHF/VHF detection and pulse.

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Datasheet preview – 1N5712

Datasheet Details

Part number 1N5712
Manufacturer LGE
File Size 142.31 KB
Description Small Signal Schottky Diodes
Datasheet download datasheet 1N5712 Datasheet
Additional preview pages of the 1N5712 datasheet.

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Full PDF Text Transcription

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Features Metal-to-silicon junction High breakdown voltage Low turn-on voltage Ultrafast switching speed Prmarly intended for high level UHF/VHF detection and pulse applications with broad dynamic range Mechanical Data Case:JEDEC DO--35,glass case Polarity: Color band denotes cathode end Weight: Approx. 0.13 gram ABSOLUTE RATINGS(LIMITING VALUES) Peak reverse voltage Pow er dissipation (Infinite Heat Sink) Forw ard continuous current Junction and storage temperature range Maximumlead temperature for soldering during 10S at 4mmfromcase 1N5712 Small Signal Schottky Diodes VOLTAGE RANGE: 20 V POWER DISSIPATION: 430 mW DO - 35(GLASS) Dimensions in millimeters Symbols VRRM Ptot IFSM TJ/TSTG TL Value 20.0 430.0 35.
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