MDG3S06C065 - 6A 650V SiC Schottky Diode

Datasheet Details

s.
No Reverse Recovery/ No Forward Recovery.
Temperature Independent Switching Behavior.
Positive Temperature Coefficient on VF.
Fast Reverse Recovery.
High Surge Current Capability.
100% UIS and RG Tested MDG3S06C065 6A 650V SiC Schottky Diode.
Product Summary VRRM IF@Tc=150℃ VF ,TYP@Tc=25℃ VF ,TYP@Tc=175℃ 650 V 6 A 1.35 V 1.7 V Qc 18 nC.
Benefits.
Higher System Efficiency.
System Cost and Size Sav.

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Published: Jul 24, 2025 |