LDTA123EM3T5G Datasheet - LRC

LDTA123EM3T5G Bias Resistor Transistors

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors PNP Silicon Surface Mount Transistors With Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a si.

LDTA123EM3T5G Features

* nput Voltage 10 VO = 0.2 V 75°C 1 25°C TA =

* 25°C +12 V Typical Application for PNP BRTs Cob , CAPACITANCE (pF) Vin, INPUT VOLTAGE (VOLTS) 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 21. Input Voltage versus Output Current LOAD Figure 22. Inexpensive, Unregulated Current

LDTA123EM3T5G Datasheet (185.28 KB)