S-LN2308LT1G - 60V N-Channel Enhancement-Mode MOSFET
S-LN2308LT1G Features
* RDS(ON) ≦100mΩ@VGS=10V
* RDS(ON) ≦130mΩ@VGS=4.5V
* RDS(ON) ≦200mΩ@VGS=3.3V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability
* Capable doing Cu wire bonding
* S- Prefix for Automotive and Other Appl
