S-LN4812LT1G - N-Channel Enhancement-Mode MOSFET
S-LN4812LT1G Features
* Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current Handling Capability S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ▼ Simple Drive Requirement ▼
