LUH75G603 - IGBT

Datasheet Summary

Features

Trench & Field Stop technology - Low saturation voltage - Low Turn-off losses - Short tail current - Positive temperature coefficient - High ruggedness.
Free wheeling diodes with fast and soft reverse recovery.
Industrial standard package with copper base plate.
Included ESD protection function.
(1).
High thermal performance (AlN substrate is used).

LUH75G603 IGBT by LSIS - Datasheet Preview — Datasheet preview – LUH75G603

Datasheet Details

Part number	LUH75G603
Manufacturer	LSIS
File Size	653.12 KB
Description	IGBT
Datasheet	LUH75G603 Datasheet
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LUH75G603 LUH75G603Z*(1) SUSPM™ 600V 75A 2-Pack IGBT Module Features • Trench & Field Stop technology - Low saturation voltage - Low Turn-off losses - Short tail current - Positive temperature coefficient - High ruggedness • Free wheeling diodes with fast and soft reverse recovery • Industrial standard package with copper base plate • Included ESD protection function *(1) • High thermal performance (AlN substrate is used) Applications • Welder / Power Supply • UPS / Inverter • Industrial Motor Drive Absolute Maximum Ratings TC = 25°C unless otherwise noted Item IGBT Diode Module Symbol VCES VGES IC ICM TSC Tj PD VRRM IF IFRM Tj Tstg Viso Mt MS W Conditions @Tj= 175 °C, TC = 25 °C, Continuous @Tj= 175°C, TC =80°C, Continuous @TC =80 °C, tp=1ms Chip Level, @Tj = 150 °C, VGE= 15V, VCES

Published: Jan 2, 2019 |