* High voltage, low saturation voltage, small collector output capacitance. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -300 V VCEO -300 V VEBO -8.0 V IC -100 mA IB -20 mA PC 400 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test con
3CG1091
LZG
198.97 KB
Silicon pnp transistor.
2SA1091(3CG1091)
PNP /SILICON PNP TRANSISTOR
:,,/Purpose: High voltage control,
plasma display, nixie tube driver, cathode ray tube brightness cont.
📁 Related Datasheet
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:,, hFE ,, 2SC1815(3.
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PNP /SILICON PNP TRANSISTOR
:/Purpose: General amplifier. :, 2SC1473(3DG1473)。 Features: High VCEO, Complementary pair with 2SC147.
3CG1020 - SILICON PNP TRANSISTOR
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PNP /SILICON PNP TRANSISTOR
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2SA1036K(3CG1036K)
PNP /SILICON PNP TRANSISTOR
:。
Purpose: Medium power amplifier applications.
:，， 2SC2411K（3DG2411K）。
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3CG1048 - SILICON PNP TRANSISTOR
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2SA1048(3CG1048)
PNP /SILICON PNP TRANSISTOR
:/Purpose: Audio frequency amplifier applications. :,,, hFE ,,
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3CG1128 - SILICON PNP TRANSISTOR
(LZG)
2SA1128(3CG1128)
PNP /SILICON PNP TRANSISTOR
:。/Purpose: Audio frequency output amplifier. :, 2SC1788(3DG1788)。
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3CG1198K - SILICON PNP TRANSISTOR
(LZG)
2SB1198K(3CG1198K)
PNP /SILICON PNP TRANSISTOR
：。
Purpose: Medium power amplifier applications.
:，, 2SD1782K(3DG1782K)。
Features: High breakdown,lo.
