3CG1955 - SILICON PNP TRANSISTOR

LZG

Datasheet Details

Low saturation voltage, large collector current. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -15 V VCEO -12 V VEBO -5.0 V IC -400 mA IB -50 mA PC 100 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO IEBO hFE VCE(sat)(1) VCE(sat)(2) VBE(sat) fT Cob Ron VCB=-15V VEB=-5.0V VCE=-2.0V IC=-10mA IC=-200mA IC=-200mA VCE=-2.0V VCB=-10V IE=0 IE=0 IC=0 IC=-10mA IB=-0.5mA IB=-10mA IB=-10mA IC=-10mA f=1.0MHz IB=-1.0mA V.

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Published: Jul 14, 2017 |