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3CG1955 Datasheet - LZG

3CG1955 SILICON PNP TRANSISTOR

3CG1955 Features

* Low saturation voltage, large collector current. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -15 V VCEO -12 V VEBO -5.0 V IC -400 mA IB -50 mA PC 100 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO IEBO hFE VCE(sa

3CG1955-LZG.pdf

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Datasheet Details

Part number:

3CG1955

Manufacturer:

LZG

File Size:

215.59 KB

Description:

Silicon pnp transistor.

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