Low RDS(ON)、Low gate charge、Low Crss 、Fast switching、Improved dv/dt capability. /Absolute maximum ratings(Ta=25℃)
Symbol Rating Unit
VDSS ID(Tc=25℃) ID(Tc=100℃) IDM VGS EAS EAR IAR PD(Tc=25℃) TJ,TSTG
600 5.5 3.3 22 ±30 300 12.5 5.5 80 -55 to 150
V A A A V mJ mJ A W ℃
/Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA VDS=600V VGS=0V IDSS TC=125℃ VDS=480V IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=10V ID=2.75A gFS VDS=40V ID=2.75A VSD VGS=0V.
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BRF6N60(CS6N60F)
: DC/DC
N-Channel MOSFET/N MOS
Purpose: These devices are well suited for high efficiency switching DC/DC converters
and switch mode power supplies. : DS 、、、、 dv/dt 。
Features: Low RDS(ON)、Low gate charge、Low Crss 、Fast switching、Improved dv/dt capability.
/Absolute maximum ratings(Ta=25℃)
Symbol Rating Unit
VDSS ID(Tc=25℃) ID(Tc=100℃) IDM VGS EAS EAR IAR PD(Tc=25℃) TJ,TSTG
600 5.5 3.3 22 ±30 300 12.5 5.5 80 -55 to 150
V A A A V mJ mJ A W ℃
/Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA VDS=600V VGS=0V IDSS TC=125℃ VDS=480V IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=10V ID=2.75A gFS VDS=40V ID=2.75A VSD VGS=0V IS=5.5A Ciss Coss VDS=25V VGS=0V f=1.0MHz Crss td(on) tr td(off) tf
Min 600
Typ
Max 1 10 ±0.
BRF6N60 Datasheet
