* Low RDS(ON)、Low gate charge、Low Crss 、Fast switching、Improved dv/dt capability. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS ID(Tc=25℃) ID(Tc=100℃) IDM VGS EAS EAR IAR PD(Tc=25℃) TJ,TSTG 600 5.5 3.3 22 ±30 300 12.5 5.5 80 -55 to 150 V A A A V mJ mJ A W ℃ /Electrical Characteris
BRF6N60
LZG
248.08 KB
N-channel mosfet.
BRF6N60(CS6N60F)
: DC/DC
N-Channel MOSFET/N MOS
Purpose: These devices are well suited for high efficiency switching DC/DC converters
and switc.
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