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LM8S14P03 - 30 V P-Channel Enhancement Mode MOSFET

LM8S14P03 Description

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The LM8S14P03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

LM8S14P03 Applications

* , should be limited by total power dissipation. Rev : 01.08.2021 2/5 www. leiditech. com -ID Drain Current (A) Typical Characteristics 40 35 30 VGS=-10V 25 VGS=-7V VGS=-5V 20 VGS=-4.5V 15 VGS=-3V 10 5 0 0 1 2 3 4 -VDS , Drain-to-Source Voltage (V) Fig.1 Typical Output Charact

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Datasheet Details

Part number
LM8S14P03
Manufacturer
Leiditech
File Size
1.92 MB
Datasheet
LM8S14P03-Leiditech.pdf
Description
30 V P-Channel Enhancement Mode MOSFET

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P-Channel Enhancement Mode MOSFET Leiditech
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