LM8S14P03
Description
The LM8S14P03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
30 V P-Channel Enhancement Mode MOSFET
General Features
VDS = 30V ID = 14A
RDS(ON) < 8.7mΩ @ VGS=10V
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
SOP-8
AP4409A XXX YYYY
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Qty(PCS) 3000
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM EAS IAS PD@TA=25℃ TSTG
RθJA
RθJC
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range
Thermal Resistance...
