PJEC3V3M1FN2 - TVS DIODE

Leiditech

Datasheet Details

Protects one data line.
Ultra low leakage: nA level.
Operating voltage: 3.3V.
Ultra low clamping voltage.
Complies with following standards:.
IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV.
IEC61000-4-5 (Lightning) 8A (8/20μs).
RoHS Compliant.

📁 PJEC3V3M1FN2 Similar Datasheet

PJEC3V0V1WS - Very Low Capacitance TVS/ESD Protection (Pan Jit International)
PJEC5V0V6FN2 - Very Low Capacitance TVS/ESD Protection (Pan Jit International)
PJEC5V0V6TS - Very Low Capacitance TVS/ESD Protection (Pan Jit International)
PJE138K - 50V N-Channel MOSFET (PAN JIT)
PJE138L - 60V N-Channel Enhancement Mode MOSFET (Pan Jit International)
PJE5V0M1FN2 - Low Capacitance TVS/ESD Protection (Pan Jit International)
PJE5V0U8TB6 - Low Capacitance ESD Protection (Pan Jit International)
PJE8400 - 20V N-CHANNEL MOSFET (Pan Jit International)

Other Datasheets by Leiditech

Published: Oct 2, 2023 |