S-L2SA1365ELT3G
DESCRIPTION
L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat).
F.EATURE
- Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ
- Excellent linearity of DC forward current gain.
- Super mini package for easy mounting
- High collector current ICM=-1A
- High gain band width product f T =180MHz typ
- We declare that the material of product pliance with Ro HS requirements.
- We declare that the material of product is ROHS pliant
- S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, AEC-Q101 Qualified and PPAP Capable.
L2SA1365- LT1G S-L2SA1365- LT1G
1 2
SOT- 23
APPLICATION
Small type motor drive, relay drive, power supply.
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
VCBO Collector to Base voltage VCEO Collector to Emitter voltage VEBO Emitter to Base voltage I O Collector current Pc Collector dissipation
Tj Junction temperature Tstg Storage temperature
Ratings -25...
