S-L2SA1365ELT3G Datasheet PDF (General Purpose Transistor) | Download Leshan Radio Company S-L2SA1365ELT3G

S-L2SA1365ELT3G - General Purpose Transistor

This page provides the datasheet information for the S-L2SA1365ELT3G, a member of the S-L2SA1365ELT1G General Purpose Transistor family.

Description

L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat).

Small collector to emitter saturation voltage.

Excellent linearity of DC forward current gain.

Super mini package for easy mounting

Datasheet Details

Part number	S-L2SA1365ELT3G
Manufacturer	Leshan Radio Company
File Size	677.20 KB
Description	General Purpose Transistor
Datasheet	S-L2SA1365ELT3G Datasheet
Additional preview pages of the S-L2SA1365ELT3G datasheet.

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Full PDF Text Transcription

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LESHAN RADIO COMPANY, LTD. General Purpose Transistor DESCRIPTION L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat). F.EATURE ●Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ ●Excellent linearity of DC forward current gain. ●Super mini package for easy mounting ●High collector current ICM=-1A ●High gain band width product fT =180MHz typ ●We declare that the material of product compliance with RoHS requirements. ●We declare that the material of product is ROHS compliant ●S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, AEC-Q101 Qualified and PPAP Capable.

Published: Apr 9, 2016 |