S-LBAS16WT1G
FEATURE z We declare that the material of product pliance with Ro HS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS (TA = 25o C)
Rating
Symbol
Max
Continuous Reverse Voltage
VR 75
Recurrent Peak Forward Current
IR 200
Peak Forward Surge Current Pulse Width = 10 µs
IFM(surge)
Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
200 1.6
Operating and Storage Junction Temperature Range
TJ, Tstg
- 55 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient One Diode Loaded Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm)
RθJA
DEVICE MARKING
LBAS16WT1G= A6
Unit V m A m A m W m W/°C
°C
Unit °C/m W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Forward Voltage (IF = 1.0 m A) (IF = 10 m A) (IF = 50 m A)...
