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LFUSCD20120B SiC Schottky Diode

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Description

SiC Schottky Diode LFUSCD20120B, 1200 V, 20 A, TO-247 3-lead LFUSCD20120B RoHS Pb .
The LFUSCD series of silicon carbide (SiC) Schottky diodes has near-zero recovery current, high surge capability, and a maximum operating junction te.

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Features

* Positive temperature coefficient for safe operation and ease of paralleling
* 175 °C maximum operating junction temperature
* Enhanced surge capability
* Extremely fast, temperature-independent switching behavior
* Dramatically reduced switching losses

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