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LSIC2SD065A16A - 650V 16A SiC Schottky Barrier Diode

Datasheet Summary

Description

This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.

Features

  • AEC-Q101 qualified.
  • Positive temperature coefficient for safe operation and ease of paralleling.
  • 175 °C maximum operating junction temperature.
  • Excellent surge capability.
  • Extremely fast, temperature-independent switching behavior.
  • Dramatically reduced switching losses compared to Si bipolar diodes Circuit Diagram TO-220-2L Case Case 12 1 2 Maximum Ratings Characteristics Repetitive Peak Reverse Voltage DC Blocking Voltage Conti.

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Datasheet Details

Part number LSIC2SD065A16A
Manufacturer Littelfuse
File Size 631.51 KB
Description 650V 16A SiC Schottky Barrier Diode
Datasheet download datasheet LSIC2SD065A16A Datasheet
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GEN2 SiC Schottky Diode LSIC2SD065A16A, 650V, 16A, TO-220-2L LSIC2SD065A16A 650 V, 16 A SiC Schottky Barrier Diode RoHS Pb *Image for reference only, for details refer to Dimensions-Packag. Description This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.
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