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LSIC2SD065C10A - 10A SiC Schottky Barrier Diode

Datasheet Summary

Features

  • AEC-Q101 qualified.
  • MSL 1 Rated.
  • Positive temperature coefficient for safe operation and ease of paralleling.
  • 175 °C maximum operating junction temperature.
  • Excellent surge capability.
  • Extremely fast, temperature-independent switching behavior.
  • Dramatically reduced switching losses compared to Si bipolar diodes.
  • RoHS compliant, lead-free, and halogen-free.

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Datasheet Details

Part number LSIC2SD065C10A
Manufacturer Littelfuse
File Size 559.84 KB
Description 10A SiC Schottky Barrier Diode
Datasheet download datasheet LSIC2SD065C10A Datasheet
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LSIC2SD065C10A • LSIC2SD065C10A • 650 V, 10 A SiC Schottky Barrier Diode Silicon Carbide Schottky Diode Datasheet Agency Approvals and Environmental Environmental Approvals Circuit Diagram TO-252-2L Product Summary Characteristic VRRM IF (TC 135 °C) QC (VR: 0 - 400 V) Value 650 13 31 Unit V A nC Features • AEC-Q101 qualified • MSL 1 Rated • Positive temperature coefficient for safe operation and ease of paralleling • 175 °C maximum operating junction temperature • Excellent surge capability • Extremely fast, temperature-independent switching behavior • Dramatically reduced switching losses compared to Si bipolar diodes • RoHS compliant, lead-free, and halogen-free Applications • Boost diodes in PFC or DC/DC stages • Switch-mode power supplies • Solar inverters • Uninterruptable powe
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