LSH11N65E Datasheet - Lonten

LSH11N65E - N-channel 650V Power MOSFET

LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max 700V RDS(on),max 0.40Ω.

LSH11N65E Features

* Ultra low RDS(on)

* Ultra low gate charge (typ. Qg = 34nC)

* High body diode ruggedness

* Easy to use

* 100% UIS tested

* RoHS compliant TO-251 TO-252,TO-263 TO-220 TO-220MF TO-247 TO-262 Applications D

* PFC stages, hard switching PWM stages and resonant switchi

LSH11N65E-Lonten.pdf