TBS6416B4E, TBS6416B4E_M 1M x 16 Bit x 4 Bank Synchronous DRAM

Description

M.tec 1M x 16Bit x 4 Banks synchronous DRAM TBS6416B4E GENERAL .
The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with M’tec high perfo.

📥 Download Datasheet

TBS6416B4E Datasheet Preview — This datasheet PDF includes multiple part numbers: TBS6416B4E, TBS6416B4E_M. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: TBS6416B4E, TBS6416B4E_M
Manufacturer: M-tec
File Size: 111.94 KB
Datasheet: TBS6416B4E_M-tec.pdf
Description: 1M x 16 Bit x 4 Bank Synchronous DRAM
Note: This datasheet PDF includes multiple part numbers: TBS6416B4E, TBS6416B4E_M.
Please refer to the document for exact specifications by model.

Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four-banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are

TBS6416B4E Distributors

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📌 All Tags

TBS6416B4E_M Bit Bank Synchronous DRAM M-tec

M-tec TBS6416B4E-like datasheet