TBS6416B4E, TBS6416B4E_M Datasheet - M-tec

TBS6416B4E 1M x 16 Bit x 4 Bank Synchronous DRAM

The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with M’tec high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycl.

TBS6416B4E Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four-banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are

TBS6416B4E_M-tec.pdf

TBS6416B4E Datasheet Preview — This datasheet PDF includes multiple part numbers: TBS6416B4E, TBS6416B4E_M. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

TBS6416B4E, TBS6416B4E_M

Manufacturer:

M-tec

File Size:

111.94 KB

Description:

1m x 16 bit x 4 bank synchronous dram.

Note:

This datasheet PDF includes multiple part numbers: TBS6416B4E, TBS6416B4E_M.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

TBS6416B4E 1M x 16-Bit x 4-Banks SDRAM (M-tec)

TBS606 Standard Bridge Rectifier (Taiwan Semiconductor)

TBS608 Standard Bridge Rectifier (Taiwan Semiconductor)

TBS610 Standard Bridge Rectifier (Taiwan Semiconductor)

TBS30A Single Phase Glass Passivated Bridge Rectifier (MCC)

TBS30B Single Phase Glass Passivated Bridge Rectifier (MCC)

TBS30D Single Phase Glass Passivated Bridge Rectifier (MCC)

TBS30G Single Phase Glass Passivated Bridge Rectifier (MCC)

TAGS

TBS6416B4E TBS6416B4E_M Bit Bank Synchronous DRAM M-tec

TBS6416B4E Distributor