TBS6416B4E, TBS6416B4E_M Datasheet - M-tec

Datasheet Details

Part number:

TBS6416B4E, TBS6416B4E_M

Manufacturer:

M-tec

File Size:

111.94 KB

Description:

1M x 16 Bit x 4 Bank Synchronous DRAM

Note:

This datasheet PDF includes multiple part numbers: TBS6416B4E, TBS6416B4E_M.
Please refer to the document for exact specifications by model.

Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four-banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are

TBS6416B4E_M-tec.pdf

TBS6416B4E Datasheet Preview — This datasheet PDF includes multiple part numbers: TBS6416B4E, TBS6416B4E_M. Please refer to the document for exact specifications by model.

TBS6416B4E, TBS6416B4E_M, 1M x 16 Bit x 4 Bank Synchronous DRAM

The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with M’tec high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycl

TBS6416B4E Distributor

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