TBS6416B4E, TBS6416B4E_M - 1M x 16 Bit x 4 Bank Synchronous DRAM

TBS6416B4E Datasheet Preview — This datasheet PDF includes multiple part numbers: TBS6416B4E, TBS6416B4E_M. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	TBS6416B4E, TBS6416B4E_M
Manufacturer	M-tec
File Size	111.94 KB
Description	1M x 16 Bit x 4 Bank Synchronous DRAM
Datasheet	TBS6416B4E_M-tec.pdf
Note	This datasheet PDF includes multiple part numbers: TBS6416B4E, TBS6416B4E_M. Please refer to the document for exact specifications by model.

TBS6416B4E Product details

Description

The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with M’tec high performance CMOS technology.

Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four-banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM for masking.
Auto & self refresh.
64ms refresh period (4K cycle.

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Published: Jun 18, 2005 |