TBS6416B4E

1M x 16 Bit x 4 Bank Synchronous DRAM

TBS6416B4E Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four-banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are

TBS6416B4E General Description

The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with M’tec high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycl.

TBS6416B4E Datasheet (111.94 KB)

TBS6416B4E Datasheet Preview — Preview of TBS6416B4E PDF

Datasheet Details

Part number:

TBS6416B4E

Manufacturer:

M-tec

File Size:

111.94 KB

Description:

1m x 16 bit x 4 bank synchronous dram.

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TAGS

TBS6416B4E Bit Bank Synchronous DRAM M-tec

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TBS6416B4E Features

TBS6416B4E General Description

Datasheet Details

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Description:

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