Datasheet4U Logo Datasheet4U.com

TBS6416B4E

1M x 16-Bit x 4-Banks SDRAM

TBS6416B4E Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four-banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are

TBS6416B4E General Description

The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with M’tec high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycl.

TBS6416B4E Datasheet (304.65 KB)

Preview of TBS6416B4E PDF

Datasheet Details

Part number:

TBS6416B4E

Manufacturer:

M-tec

File Size:

304.65 KB

Description:

1m x 16-bit x 4-banks sdram.

📁 Related Datasheet

TBS6416B4E 1M x 16 Bit x 4 Bank Synchronous DRAM (M-tec)

TBS606 Standard Bridge Rectifier (Taiwan Semiconductor)

TBS608 Standard Bridge Rectifier (Taiwan Semiconductor)

TBS610 Standard Bridge Rectifier (Taiwan Semiconductor)

TBS30A Single Phase Glass Passivated Bridge Rectifier (MCC)

TBS30B Single Phase Glass Passivated Bridge Rectifier (MCC)

TBS30D Single Phase Glass Passivated Bridge Rectifier (MCC)

TBS30G Single Phase Glass Passivated Bridge Rectifier (MCC)

TBS30J Single Phase Glass Passivated Bridge Rectifier (MCC)

TBS30K Single Phase Glass Passivated Bridge Rectifier (MCC)

TAGS

TBS6416B4E 16-Bit 4-Banks SDRAM M-tec

Image Gallery

TBS6416B4E Datasheet Preview Page 2 TBS6416B4E Datasheet Preview Page 3

TBS6416B4E Distributor