TBS6416B4E 1M x 16-Bit x 4-Banks SDRAM

Description

www.DataSheet4U.com M.tec 1M x 16Bit x 4 Banks synchronous DRAM TBS6416B4E GENERAL .
The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with M’tec high perfo.

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Datasheet Specifications

Part number: TBS6416B4E
Manufacturer: M-tec
File Size: 304.65 KB
Datasheet: TBS6416B4E_Mtec.pdf
Description: 1M x 16-Bit x 4-Banks SDRAM

Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four-banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are

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TBS6416B4E 16-Bit 4-Banks SDRAM M-tec

M-tec TBS6416B4E-like datasheet