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TBS6416B4E Datasheet - M-tec

TBS6416B4E_Mtec.pdf

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Datasheet Details

Part number:

TBS6416B4E

Manufacturer:

M-tec

File Size:

304.65 KB

Description:

1m x 16-bit x 4-banks sdram.

TBS6416B4E, 1M x 16-Bit x 4-Banks SDRAM

The TBS6416B4E is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with M’tec high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycl

TBS6416B4E Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four-banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are

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