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MSS30-248-H30 Datasheet - MA-COM

Low Barrier Silicon Schottky Diodes

MSS30-248-H30 General Description

The MSS30-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of -3 dBm to +3 dBm per diode. Rev. V1 Chip Electrical Specifications: TA = 25°C Mo.

MSS30-248-H30 Datasheet (666.71 KB)

Preview of MSS30-248-H30 PDF

Datasheet Details

Part number:

MSS30-248-H30

Manufacturer:

MA-COM

File Size:

666.71 KB

Description:

Low barrier silicon schottky diodes.

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MSS30-248-H30 Low Barrier Silicon Schottky Diodes MA-COM

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