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MSS39-148-B10B Datasheet - MA-COM

MSS39-148-B10B P-Type Silicon Schottky Diodes

The MSS39-xxx-x Series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biaseddetector applications up to 40 GHz. Rev. V1 Chip Electrical Specifications: TA = 25°C Model VBR Min. V VF Typ. V MSS39-045-C15 5 0.40 CJ Max. pF 0.10.

MSS39-148-B10B Datasheet (657.97 KB)

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Datasheet Details

Part number:

MSS39-148-B10B

Manufacturer:

MA-COM

File Size:

657.97 KB

Description:

P-type silicon schottky diodes.

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MSS39-148-B10B P-Type Silicon Schottky Diodes MA-COM

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