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MSS40-248-E35

Medium Barrier Silicon Schottky Diodes

MSS40-248-E35 Features

* VF, RD and CJ Matching Options

* Chip, Beam Lead and Packaged Devices

* Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS40-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest

MSS40-248-E35 General Description

The MSS40-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of 0 dBm to +6 dBm per diode. Rev. V1 Chip Electrical Specifications: TA = 25°C Mod.

MSS40-248-E35 Datasheet (665.79 KB)

Preview of MSS40-248-E35 PDF

Datasheet Details

Part number:

MSS40-248-E35

Manufacturer:

MA-COM

File Size:

665.79 KB

Description:

Medium barrier silicon schottky diodes.

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MSS40-248-E35 Medium Barrier Silicon Schottky Diodes MA-COM

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