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MSS50-244-E30

High Barrier Silicon Schottky Diodes

MSS50-244-E30 Features

* VF, RD and CJ Matching Options

* Chip, Beam Lead and Packaged Devices

* Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS50-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest

MSS50-244-E30 General Description

The MSS50-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of +2 dBm to +8 dBm per diode. Rev. V1 Chip Electrical Specifications: TA = 25°C Mo.

MSS50-244-E30 Datasheet (650.15 KB)

Preview of MSS50-244-E30 PDF

Datasheet Details

Part number:

MSS50-244-E30

Manufacturer:

MA-COM

File Size:

650.15 KB

Description:

High barrier silicon schottky diodes.

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MSS50-244-E30 High Barrier Silicon Schottky Diodes MA-COM

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