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MSS60-153-B10B - Extra High Barrier Silicon Schottky Diodes

This page provides the datasheet information for the MSS60-153-B10B, a member of the MSS60-144-B10B-MA Extra High Barrier Silicon Schottky Diodes family.

Datasheet Summary

Description

The MSS60-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry.

Optimum mixer performance is obtained with LO power of +6 dBm to +12 dBm per diode.

Rev.

Features

  • VF, RD and CJ Matching Options.
  • Chip, Beam Lead and Packaged Devices.
  • Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available.

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Datasheet preview – MSS60-153-B10B

Datasheet Details

Part number MSS60-153-B10B
Manufacturer MA-COM
File Size 613.08 KB
Description Extra High Barrier Silicon Schottky Diodes
Datasheet download datasheet MSS60-153-B10B Datasheet
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MSS60-xxx-x Series Extra High Barrier Silicon Schottky Diodes Features  VF, RD and CJ Matching Options  Chip, Beam Lead and Packaged Devices  Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS60-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of +6 dBm to +12 dBm per diode. Rev. V1 Beam Lead Electrical Specifications: TA = 25°C Model Configuration VF Typ.
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