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MSS60-253-E35

Extra High Barrier Silicon Schottky Diodes

MSS60-253-E35 Features

* VF, RD and CJ Matching Options

* Chip, Beam Lead and Packaged Devices

* Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS60-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest

MSS60-253-E35 General Description

The MSS60-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of +6 dBm to +12 dBm per diode. Rev. V1 Beam Lead Electrical Specifications: TA = 25.

MSS60-253-E35 Datasheet (613.08 KB)

Preview of MSS60-253-E35 PDF

Datasheet Details

Part number:

MSS60-253-E35

Manufacturer:

MA-COM

File Size:

613.08 KB

Description:

Extra high barrier silicon schottky diodes.

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MSS60-253-E35 Extra High Barrier Silicon Schottky Diodes MA-COM

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