The MSS60-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry.
Optimum mixer performance is obtained with LO power of +6 dBm to +12 dBm per diode.
Rev.
V1 Beam Lead Electrical Specifications: TA = 25
Datasheet Details
MSS60-846-E45, MSS60-144-B10B-MA
MA-COM
613.08 KB
Extra high barrier silicon schottky diodes.
This datasheet PDF includes multiple part numbers: MSS60-846-E45, MSS60-144-B10B-MA.
Please refer to the document for exact specifications by model.
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