NPA1007

GaN on Silicon Power Amplifier

MA-COM

NPA1007 Features

* GaN on Si HEMT D-Mode Amplifier

* Suitable for Linear & Saturated Applications

* Broadband Operation from 20 - 2500 MHz

* 28 V Operation

* 12.5 dB Gain @ 2500 MHz

* 43% Drain Efficiency @ 2500 MHz

* 100% RF Tested

* Fully Matched at Input, Unmatched at Output

NPA1007 General Description

The NPA1007 is a GaN on silicon power amplifier optimized for 20 - 2500 MHz operation. This amplifier has been designed for saturated and linear operation and it is assembled in a lead-free 6 x 5 mm 8-lead PDFN plastic package. The NPA1007 is a general purpose device suited for narrowband and broadb.

NPA1007 Datasheet (1.14 MB)

NPA1007 Datasheet Preview — Preview of NPA1007 PDF

Datasheet Details

Part number:

NPA1007

Manufacturer:

MA-COM

File Size:

1.14 MB

Description:

Gan on silicon power amplifier.

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NPA1007 GaN Silicon Power Amplifier MA-COM

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NPA1007 Features

NPA1007 General Description

Datasheet Details

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Description:

NPA1007 Distributor