Download XP1042-QT Datasheet PDF
MACOM Technology Solutions
XP1042-QT
XP1042-QT is Power Amplifier manufactured by MACOM Technology Solutions.
- Part of the XP1042-QT-MA comparator family.
Features - 21 d B Small Signal Gain - 25 d Bm P1d B pression Point - 38 d Bm Output IP3 Linearity - 17 d B Gain Control with Bias Adjust - 3x3mm Standard QFN Package - 100% RF Testing - Ro HS- pliant and 260°C Reflow patible Description The XP1042-QT is a packaged driver amplifier that operates over the 12.0-16.0 GHz frequency band. The device provides 21 d B gain and 38 d Bm Output Third Order Intercept Point (OIP3) across the band and is offered in an industry standard, fully molded 3x3mm QFN package. The device includes on-chip ESD protection structures and DC by-pass capacitors to ease the implementation and volume assembly of the packaged part. The device is manufactured in 0.5um Ga As PHEMT device technology with BCB wafer coating to enhance ruggedness and repeatability of performance. The XP1042-QT is well suited for Point-to-Point Radio, LMDS, SAT and VSAT applications. Ordering Information Part Number XP1042-QT-0G00 XP1042-QT-0G0T XP1042-QT-EV1 Package bulk quantity tape and reel evaluation module Rev. V1 Functional Block Diagram/Board Layout nc Vd1 Vd2 Vd3 5 16 6 15 7 14 8 13 nc nc RF In nc 1 2 3 4 12 nc 11 nc 10 RF Out 9 nc Vg1 Vg2 Vg3 nc Pin Configuration Pin No. Function 1-2 Not Connected 3 RF Input 4 Not Connected 5 Gate 1 Bias 6 Gate 2 Bias 7 Gate 3 Bias 8-9 Not Connected Pin No. 10 11-12 13 14 15 16 Function RF Output Not Connected Drain 3 Bias Drain 2 Bias Drain 1 Bias Not Connected Absolute Maximum Ratings1 Parameter Absolute Max. Supply Voltage (Vd1,2,3) Supply Current (Id1,2,3) Gate Bias Voltage (Vg1,2,3) +8.0 V 550 m A -2.4 V Max Power Dissipation (Pdiss) RF Input Power 2.8W 15 d Bm Operating Temperature (Ta) Storage Temperature (Tstg) Channel Temperature (Tch)2 -55 ºC to +85 ºC -65 ºC to +165 ºC 150 ºC ESD Min. - Machine Model...