Datasheet4U Logo Datasheet4U.com

NPT2010 Datasheet - MACOM

GaN on Silicon General Purpose Amplifier

NPT2010 Features

* GaN on Si HEMT D-Mode Amplifier

* Suitable for Linear & Saturated Applications

* Tunable from DC - 2.2 GHz

* 48 V Operation

* 15 dB Gain @ 2.15 GHz

* 61% Drain Efficiency @ 2.15 GHz

* 100% RF Tested

* Industry Standard Metal-Ceramic Package

* RoHS

* Compliant

NPT2010 General Description

The NPT2010 is a GaN HEMT general purpose amplifier optimized for DC - 2.2 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 100 W (50 dBm) in an industry standard metal-ceramic package with bolt down flange. The NPT2010 is ideally suited for defense co.

NPT2010 Datasheet (1.36 MB)

Preview of NPT2010 PDF

Datasheet Details

Part number:

NPT2010

Manufacturer:

MACOM

File Size:

1.36 MB

Description:

Gan on silicon general purpose amplifier.

📁 Related Datasheet

NPT2010 GaN HEMT (Nitronex)

NPT2018 GaN HEMT (Nitronex)

NPT2019 GaN HEMT (Nitronex)

NPT2020 GaN Wideband Transistor (MA-COM)

NPT2020-SMB2 GaN Wideband Transistor (MA-COM)

NPT2021 GaN Wideband Transistor (MA-COM)

NPT2022 HEMT D-Mode Amplifier (MA-COM)

NPT25 Press Fit Triac (Naina Semiconductor)

NPT25100 28V GaN Power Amplifier (MACOM)

NPT25100B 28V GaN Power Amplifier (MACOM)

TAGS

NPT2010 GaN Silicon General Purpose Amplifier MACOM

Image Gallery

NPT2010 Datasheet Preview Page 2 NPT2010 Datasheet Preview Page 3

NPT2010 Distributor