NPT2010
Features
- Ga N on Si HEMT D-Mode Amplifier
- Suitable for Linear & Saturated Applications
- Tunable from DC
- 2.2 GHz
- 48 V Operation
- 15 d B Gain @ 2.15 GHz
- 61% Drain Efficiency @ 2.15 GHz
- 100% RF Tested
- Industry Standard Metal-Ceramic Package
- Ro HS- pliant
Description
The NPT2010 is a Ga N HEMT general purpose amplifier optimized for DC
- 2.2 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 100 W (50 d Bm) in an industry standard metal-ceramic package with bolt down flange.
The NPT2010 is ideally suited for defense munications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar.
Ordering Information
Part Number NPT2010
NPT2010-SMBPPR
Package bulk quantity sample
Functional Schematic
Rev. V3
RFIN / VG
RFOUT / VD
Pin Configuration
Pin #
Pin Name
Function
RFIN / VG
RF Input / Gate
RFOUT / VD
RF Output / Drain
Flange1
Ground / Source
1. The Flange must be...
