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NPT2010

GaN on Silicon General Purpose Amplifier

NPT2010 Features

* GaN on Si HEMT D-Mode Amplifier

* Suitable for Linear & Saturated Applications

* Tunable from DC - 2.2 GHz

* 48 V Operation

* 15 dB Gain @ 2.15 GHz

* 61% Drain Efficiency @ 2.15 GHz

* 100% RF Tested

* Industry Standard Metal-Ceramic Package

* RoHS

* Compliant

NPT2010 General Description

The NPT2010 is a GaN HEMT general purpose amplifier optimized for DC - 2.2 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 100 W (50 dBm) in an industry standard metal-ceramic package with bolt down flange. The NPT2010 is ideally suited for defense co.

NPT2010 Datasheet (1.36 MB)

Preview of NPT2010 PDF

Datasheet Details

Part number:

NPT2010

Manufacturer:

MACOM

File Size:

1.36 MB

Description:

Gan on silicon general purpose amplifier.

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TAGS

NPT2010 GaN Silicon General Purpose Amplifier MACOM

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