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NPT2010 - GaN on Silicon General Purpose Amplifier

General Description

The NPT2010 is a GaN HEMT general purpose amplifier optimized for DC - 2.2 GHz operation.

This device supports CW, pulsed, and linear operation with output power levels to 100 W (50 dBm) in an industry standard metal-ceramic package with bolt down flange.

Key Features

  • GaN on Si HEMT D-Mode Amplifier.
  • Suitable for Linear & Saturated.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NPT2010 GaN on Silicon General Purpose Amplifier DC - 2.2 GHz, 48 V, 100 W Features  GaN on Si HEMT D-Mode Amplifier  Suitable for Linear & Saturated Applications  Tunable from DC - 2.2 GHz  48 V Operation  15 dB Gain @ 2.15 GHz  61% Drain Efficiency @ 2.15 GHz  100% RF Tested  Industry Standard Metal-Ceramic Package  RoHS* Compliant Description The NPT2010 is a GaN HEMT general purpose amplifier optimized for DC - 2.2 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 100 W (50 dBm) in an industry standard metal-ceramic package with bolt down flange. The NPT2010 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar.