NPT2010 - GaN HEMT
(Nitronex)
NPT2010
Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT
Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology
Features
Suitable for.
NPT2018 - GaN HEMT
(Nitronex)
NPT2018
Preliminary
Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT
Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology
Features
.
NPT2019 - GaN HEMT
(Nitronex)
NPT2019
Preliminary
Gallium Nitride 48V, 25W, DC-6 GHz HEMT
Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology
Features
.
NPT2020 - GaN Wideband Transistor
(MA-COM)
NPT2020
GaN Wideband Transistor 48 V, 50 W DC - 3.5 GHz
Features
GaN on Si HEMT Depletion Mode Transistor Suitable for Linear and Saturated Applic.
NPT2020-SMB2 - GaN Wideband Transistor
(MA-COM)
NPT2020
GaN Wideband Transistor 48 V, 50 W DC - 3.5 GHz
Features
GaN on Si HEMT Depletion Mode Transistor Suitable for Linear and Saturated Applic.
NPT2021 - GaN Wideband Transistor
(MA-COM)
NPT2021
GaN Wideband Transistor 48 V, 45 W DC - 2.5 GHz
Features
GaN on Si HEMT D-Mode Transistor Suitable for linear and saturated applications .