PTRA095908NB Thermally-Enhanced High Power RF LDMOS FET

MACOM

Description

PTRA095908NB Thermally-Enhanced High Power RF LDMOS FET 520 W, 48 V, 925 * 960 MHz .
The PTRA095908NB is a 520-watt (P3dB) LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequen.

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Datasheet Specifications

Part number: PTRA095908NB
Manufacturer: MACOM
File Size: 684.13 KB
Datasheet: PTRA095908NB-MACOM.pdf
Description: Thermally-Enhanced High Power RF LDMOS FET

Features

* include input and output matching, high gain and thermally-enhanced plastic overmold package with earless flange. Package Types: PG-HB2SOF-6-1 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 500 mA, VGS(PEAK) = 2.10 V, ƒ = 960 MHz, 3GPP WCDMA sig

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PTRA095908NB Thermally-Enhanced High Power LDMOS FET MACOM

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