WGC20630V1A Overview
Description
The WGC20630 is a 630 W (P4dB) GaN on Silicon Carbide HEMT amplifier designed for use in multistandard cellular power amplifier applications. It features optimized operation from 1930 - 2020 MHz and a thermally-enhanced over-molded plastic package.
Key Features
- GaN on SiC HEMT Technology
- Pulsed CW Performance: 1995 MHz, 48 V, 10 µs Pulse Width, 10% Duty Cycle, Combined Outputs
- Output Power @ P4dB = 630 W
- Efficiency @ P4dB = 74%
- RoHS* Compliant
