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WGC20630V1A Thermally Enhanced GaN Amplifier

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Description

Thermally Enhanced GaN Amplifier 630 W, 48 V, 1930 - 2020 MHz .
The WGC20630 is a 630 W (P4dB) GaN on Silicon Carbide HEMT amplifier designed for use in multistandard cellular power amplifier applications.

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Datasheet Specifications

Part number
WGC20630V1A
Manufacturer
MACOM
File Size
858.73 KB
Datasheet
WGC20630V1A-MACOM.pdf
Description
Thermally Enhanced GaN Amplifier

Features

* GaN on SiC HEMT Technology
* Pulsed CW Performance: 1995 MHz, 48 V, 10 µs Pulse Width, 10% Duty Cycle, Combined Outputs
* Output Power @ P4dB = 630 W
* Efficiency @ P4dB = 74%
* RoHS

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MACOM WGC20630V1A-like datasheet