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Thermally Enhanced GaN Amplifier 630 W, 48 V, 1930 - 2020 MHz
Features
• GaN on SiC HEMT Technology • Pulsed CW Performance: 1995 MHz, 48 V, 10 µs
Pulse Width, 10% Duty Cycle, Combined Outputs • Output Power @ P4dB = 630 W • Efficiency @ P4dB = 74% • RoHS* Compliant
Applications
• Cellular Power
Description
The WGC20630 is a 630 W (P4dB) GaN on Silicon Carbide HEMT amplifier designed for use in multistandard cellular power amplifier applications. It features optimized operation from 1930 - 2020 MHz and a thermally-enhanced over-molded plastic package.
Typical RF Performance1
(Tested in Doherty application test circuit)
VDD = 48 V, IDQ = 360 mA, POUT = 49.3 dBm (85 W), TA = +25°C, Channel Bandwidth = 3.84 MHz, Peak/Average = 10 dB @ 0.
WGC20630V1A Datasheet
