WGC20630V1A Description
The WGC20630 is a 630 W (P4dB) GaN on Silicon Carbide HEMT amplifier designed for use in multistandard cellular power amplifier applications.
WGC20630V1A Key Features
- GaN on SiC HEMT Technology
- Pulsed CW Performance: 1995 MHz, 48 V, 10 µs
- Output Power @ P4dB = 630 W
- Efficiency @ P4dB = 74%
- RoHS- pliant