WGC20630V1A Datasheet | MACOM Technology Solutions

Thermally Enhanced GaN Amplifier 630 W, 48 V, 1930 - 2020 MHz Features - GaN on SiC HEMT Technology - Pulsed CW Performance: 1995 MHz, 48 V, 10 µs Pulse Width, 10% Duty Cycle, bined Outputs - Output Power @ P4dB = 630 W - Efficiency @ P4dB = 74% - RoHS- pliant Applications - Cellular Power Description The WGC20630 is a 630 W (P4dB) GaN on Silicon Carbide HEMT amplifier designed for use in multistandard cellular power amplifier applications. It Features optimized operation from 1930 - 2020 MHz and a thermally-enhanced over-molded plastic package. Typical RF Performance1 (Tested in Doherty application test circuit) VDD = 48 V, IDQ = 360 mA, POUT = 49.3 dBm (85 W), TA = +25°C, Channel...