WGC20630V1A
Description
The WGC20630 is a 630 W (P4dB) GaN on Silicon Carbide HEMT amplifier designed for use in multistandard cellular power amplifier applications.
Key Features
- GaN on SiC HEMT Technology
- Pulsed CW Performance: 1995 MHz, 48 V, 10 µs Pulse Width, 10% Duty Cycle, bined Outputs
- Output Power @ P4dB = 630 W
- Efficiency @ P4dB = 74%
- RoHS* pliant
