Part number:
MY025DBNE5
Manufacturer:
MAOYUAN
File Size:
1.50 MB
Description:
60v dual n-channel enhancement mode mosfet.
Datasheet Details
The MY025DBNE5 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.
This device is suitable for use as a Battery protection or in other Switching application.
Application * Battery protection * Load switch * Unint
MY025DBNE5 Features
* VDSS 60 V ID 10 A PD(TA=25℃) 2 W RDS(ON)(atVGS =10V) 25 mΩ D1 D2 G1 PIN1 G2 S1 S2 Package Marking and Ordering Information Product ID Pack MY025DBNE5 PDFN5
* 6-8L Marking 10B06D Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Drain-Source Voltage Gate-Sou
Datasheet Details
MY025DBNE5
MAOYUAN
1.50 MB
60v dual n-channel enhancement mode mosfet.
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