MY025DBNE5 60V Dual N-Channel Enhancement Mode MOSFET

Description

MY025DBNE5 60V Dual N-Channel Enhancement Mode MOSFET General .
The MY025DBNE5 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

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Datasheet Specifications

Part number: MY025DBNE5
Manufacturer: MAOYUAN
File Size: 1.50 MB
Datasheet: MY025DBNE5-MAOYUAN.pdf
Description: 60V Dual N-Channel Enhancement Mode MOSFET

Features

* VDSS 60 V ID 10 A PD(TA=25℃) 2 W RDS(ON)(atVGS =10V) 25 mΩ D1 D2 G1 PIN1 G2 S1 S2 Package Marking and Ordering Information Product ID Pack MY025DBNE5 PDFN5
* 6-8L Marking 10B06D Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Drain-Source Voltage Gate-Sou

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MY025DBNE5 60V Dual N-Channel Enhancement Mode MOSFET MAOYUAN

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