MY50N06D 60V N-Channel Enhancement Mode MOSFET

Description

MY50N06D 60V N-Channel Enhancement Mode MOSFET General .
The MY50N06D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

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Datasheet Specifications

Part number: MY50N06D
Manufacturer: MAOYUAN
File Size: 2.40 MB
Datasheet: MY50N06D-MAOYUAN.pdf
Description: 60V N-Channel Enhancement Mode MOSFET

Features

* VDSS 60 V ID 50 A RDS(ON)(atVGS =10V)

Applications

* , should be limited by total power dissipation. Rev 1 : Nov. 2022 www. my-mos. cn Page 2 of 5 MY50N06D 60V N-Channel Enhancement Mode MOSFET Typical Characteristics IS Source Current(A) Fig.1 Typical Output Characteristics 12 10 8 6 TJ=150℃ 4 TJ=25℃ 2 0 0.2 0.4 0.6 0.8 1 VSD , Sourc

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MY50N06D 60V N-Channel Enhancement Mode MOSFET MAOYUAN

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