2SB1197
MCC
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Pnp transistor.
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2SB1190 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1190
DESCRIPTION ·With TO-220 package ·High VCEO.
2SB1190 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min.) ·Complement t.
2SB1192 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1192
DESCRIPTION ·With TO-220Fa package ·High VC.
2SB1192 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
2SB1192
DESCRIPTION ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min.) ·Com.
2SB1193 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1193
DESCRIPTION ·With TO-220Fa package ·High DC.
2SB1193 - Silicon PNP Transistor
(Panasonic)
Power Transistors
2SB1193
Silicon PNP epitaxial planar type darlington
Unit: mm
• High forward current transfer ratio hFE • High-speed switching • F.
2SB1193 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -120V(Min) ·High DC Current Gain-
: hFE= .
2SB1194 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB1194
DESCRIPTION ·With TO-220Fa package ·High DC.
2SB1194 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
2SB1194
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -100V(Min) ·High DC Current Gain.
2SB1197 - PNP Transistor
(WEITRON)
2SB1197
PNP General Purpose Transistors
P b Lead(Pb)-Free
Features:
* High current capacity in pact package. * Epitaxial planar type. * We declare.