Datasheet4U Logo Datasheet4U.com

MCM1216 - P-Channel MOSFET

Datasheet Summary

Features

  • Advanced trench MOSFET process technology.
  • Ultra low on-resistance with low gate charge.
  • Halogen free available upon request by adding suffix "-HF".
  • Epoxy meets UL 94 V-0 flammability rating.
  • Moisture Sensitivity Level 1.
  • Marking:1216 Maximum Ratings @ 25OC Unless Otherwise Specified Symbol Parameter VDS Drain-source Voltage Rating -12 ID Drain Current-Continuous -16 IDM Pulsed Drain Current (note1) -65 VGS Gate-source Voltage f8.

📥 Download Datasheet

Datasheet preview – MCM1216

Datasheet Details

Part number MCM1216
Manufacturer MCC
File Size 782.71 KB
Description P-Channel MOSFET
Datasheet download datasheet MCM1216 Datasheet
Additional preview pages of the MCM1216 datasheet.

📁 Similar Datasheet

  • MCM101520 - 4M x 1 Bit Fast Static Random Access Memory (Motorola)
  • MCM101524 - 1M x 4 Bit Fast Static Random Access Memory (Motorola)
  • MCM101525 - 2M x 2 Bit Fast Static Random Access Memory (Motorola)
  • MCM145101 - 1024-Bit Static RAM (Motorola Semiconductor)
  • MCM1451L01 - 1024-Bit Static RAM (Motorola Semiconductor)
  • MCM14537 - CMOS LSI (Motorola)
  • MCM14552 - CMOS LSI (Motorola)
  • MCM-NE2000 - Ethernet LAN Card (ETC)
  • MCM20014 - Color VGA Digital Image Sensor (Motorola)
  • MCM20027 - Color SXGA Digital Image Sensor (Motorola)
Other Datasheets by MCC

Full PDF Text Transcription

Click to expand full text
MCC R Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MCM1216 Features • Advanced trench MOSFET process technology • Ultra low on-resistance with low gate charge • Halogen free available upon request by adding suffix "-HF" • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Marking:1216 Maximum Ratings @ 25OC Unless Otherwise Specified Symbol Parameter VDS Drain-source Voltage Rating -12 ID Drain Current-Continuous -16 IDM Pulsed Drain Current (note1) -65 VGS Gate-source Voltage f8 PD R©JA R©JC Power Dissipation(note2,Ta=25oC) Maximum Power Dissipation(note3,Tc=25oC) Thermal Resistance Junction to Ambient(note4) Thermal Resistance Junction to Case(note4)
Published: |