MT50N03
FEATURES
- Super high dense cell design for low RDS(ON)
- Rugged and reliable
- Simple drive requirement
- TO-252 package
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
30V 50A
6@ VGS=10V 9@ VGS=4.5V
NOTE：The MT50N03 is available in a lead-free package
ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted）
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuousª@Tj=125℃
Symbol
VDS VGS ID
Limit
30 ±20 50
- Pulse d b
IDM 350
Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range
IS PD
TJ,TSTG
60 70
-55 to 150
Unit
℃
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to Ambientª
Rth JA
40 ℃/W
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