MT50P03
FEATURES
- Super high dense cell design for low RDS(ON)
- Rugged and reliable
- Simple drive requirement
- TO-252 package
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
-30V -50A
20@ VGS=-10V 28 @ VGS=-4.5V
NOTE：The MT50P03 is available in a lead-free package
ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted）
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuousª@Tj=125℃
Symbol
VDS VGS ID
Limit
-30 ±20 -50
- Pulse d b
IDM -105
Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range
IS PD
TJ,TSTG
-1.8 150
-55 to 150
Unit
℃
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to Ambientª
Rth JA
50 ℃/W
©2007 Mos-Tech Semiconductor
1 http//.mtsemi.
茂钿半導體股份有限公司
Mos-Tech Semiconductor...
