MT6680 Datasheet - MOS-TECH

MT6680 N-Channel Power MOSFET

This N-Channel MOSFET is produced using Mos-tech Semiconductor’s advanced Power mosfet process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Pack.

MT6680 Features

* Max rDS(on) = 9mΩ at VGS = 10V, ID = 15A

* Max rDS(on) = 12mΩ at VGS = 4.5V, ID =12.6A

* HBM ESD protection level of 3KV typical (note 3)

* High performance trench technology for extremely low rDS(on)

* High power and current handling capability

* Ro

MT6680 Datasheet (530.59 KB)