Description
MOS-TECH Semiconductor Co.,LTD MT6680 N-Channel Power MOSFET 30V, 15A, 9.0mΩ .
This N-Channel MOSFET is produced using Mos-tech Semiconductor’s advanced Power mosfet process that has been especially tailored to minimize the on-st.
Features
* Max rDS(on) = 9mΩ at VGS = 10V, ID = 15A
* Max rDS(on) = 12mΩ at VGS = 4.5V, ID =12.6A
* HBM ESD protection level of 3KV typical (note 3)
* High performance trench technology for extremely low rDS(on)
* High power and current handling capability
* Ro
Applications
* common in Notebook Computers and Portable Battery Packs. D D D
D
SO-8
Pin 1
G
S S S
D D D D
G S S S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS
ID
EAS
PD
TJ, TSTG
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous
-Pulsed Single Pu