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MT6680, MT6680-MOS N-Channel Power MOSFET

MT6680 Description

MOS-TECH Semiconductor Co.,LTD MT6680 N-Channel Power MOSFET 30V, 15A, 9.0mΩ .
This N-Channel MOSFET is produced using Mos-tech Semiconductor’s advanced Power mosfet process that has been especially tailored to minimize the on-st.

MT6680 Features

* Max rDS(on) = 9mΩ at VGS = 10V, ID = 15A
* Max rDS(on) = 12mΩ at VGS = 4.5V, ID =12.6A
* HBM ESD protection level of 3KV typical (note 3)
* High performance trench technology for extremely low rDS(on)
* High power and current handling capability
* Ro

MT6680 Applications

* common in Notebook Computers and Portable Battery Packs. D D D D SO-8 Pin 1 G S S S D D D D G S S S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pu

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: MT6680, MT6680-MOS. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
MT6680, MT6680-MOS
Manufacturer
MOS-TECH
File Size
530.59 KB
Datasheet
MT6680-MOS-TECH.pdf
Description
N-Channel Power MOSFET
Note
This datasheet PDF includes multiple part numbers: MT6680, MT6680-MOS.
Please refer to the document for exact specifications by model.

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📌 All Tags

N-Channel Power MOSFET MOS-TECH
MOS-TECH MT6680-like datasheet