MT6680 - N-Channel Power MOSFET

Product Overview

MOS-TECH

Datasheet Details

Part number	MT6680
Manufacturer	MOS-TECH
File Size	530.59 KB
Description	N-Channel Power MOSFET
Datasheet	MT6680 Datasheet
Note	This datasheet PDF includes multiple part numbers: MT6680, MT6680-MOS. Please refer to the document for exact specifications by model.
Additional preview pages of the MT6680 datasheet.

Product details

Description

This N-Channel MOSFET is produced using Mos-tech Semiconductor’s advanced Power mosfet process that has been especially tailored to minimize the on-state resistance.

Features

Max rDS(on) = 9mΩ at VGS = 10V, ID = 15A.
Max rDS(on) = 12mΩ at VGS = 4.5V, ID =12.6A.
HBM ESD protection level of 3KV typical (note 3).
High performance trench technology for extremely low rDS(on).
High power and current handling capability.
RoHS compliant General.

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Published: Apr 10, 2017 |