* Advanced Trench Process Technology. High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. RoHS Compliant. ℃Absolute Maximum Ratings (TA = 25 unless otherwise noted) Symbol VDS VGS ID IDM IS PD TJ, Tstg Parameter Drain-Source Voltage Gate-Source Voltage Continuous Dr
MT8103
MOS-TECH
1.44 MB
P-channel enhancement mode field effect transistor.
MOS-TECH Semiconductor Co.,LTD MT8103 P-Channel Enhancement Mode Field Effect Transistor Product Summary VDS= -30V ID= -13A (VGS= -10V) ≦ ΩRDS(ON).
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