MSK4105 HIGH TEMPERATURE 600V/10A HERMETIC HALF BRIDGE

MSK

Description

MIL-PRF-38534 & 38535 CERTIFIED FACILITY HIGH TEMPERATURE 600V/10A HERMETIC HALF BRIDGE 4105 .
The MSK4105 is a hermetic high temperature half bridge configuration SiC (Silicon Carbide) power MOSFET design with parallel SiC recovery diodes.

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Datasheet Specifications

Part number: MSK4105
Manufacturer: MSK
File Size: 492.56 KB
Datasheet: MSK4105-MSK.pdf
Description: HIGH TEMPERATURE 600V/10A HERMETIC HALF BRIDGE

Features

* Operational From -55°C to 190°C Half Bridge Configuration Silicon Carbide Power MOSFETS Silicon Carbide Recovery Diodes 600V Rated Voltage 20A Continuous Output Current at Tc=25°C 10A Continuous Output Current at Tc=190°C Available in Three Lead Bend Configurations Package Isolated for High Voltage

Applications

* The MSK4105 is capable of 10 amps of continuous output current at Tc=190°C. The 600V rating makes the MSK4105 ideal for high bus voltage applications. The package is electrically isolated which allows direct heat sinking and provides good thermal conductivity. The package is a space efficient 18 pi

MSK4105 Distributors

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MSK4105 HIGH TEMPERATURE 600V 10A HERMETIC HALF BRIDGE MSK

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