MT3240A/B N-Channel Low Q g MOSFET 40V,250A,2.3mΩ )HDWXUHV Max RDS (on)=2.3m: at VGS =10V,ID=40A High performance trench technology for extremely low RDS (on) Low Gate Charge High power and current handing capability HQHUDO'HVFULSWLRQ This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate
